|
|
In this Topic Hide
| Qxxxx collector base emitter [substrate] modelname [M=multiplier] [AREA|SCALE=area] |
| collector | Collector node name |
| base | Base node name |
| emitter | Emitter node name |
| substrate | Substrate node name |
| modelname | Name of model. Must begin with a letter but can contain any character except whitespace and '.'. |
| multiplier | Device scale. Has an identical effect as putting multiplier devices in parallel. |
| area | Scales certain model parameters as described in the parameter table under Area column. A $\times$ entry means the parameter is multiplied by the area while a $\div$ means the parameter is divided by the area. |
| .MODEL modelname NPN|PNP LEVEL=4 parameters |
| Name | Description | Units | Default | Area |
|---|---|---|---|---|
| TNOM/TREF | Nominal ambient temperature | Celsius | 27 | |
| RCX | Extrinsic collector resistance | Ohms | 0.0 | $\div$ |
| RCI | Intrinsic collector resistance | Ohms | 0.0 | $\div$ |
| VO | Epi drift saturation voltage | 0.0 | ||
| GAMM | Epi doping parameter | 0.0 | ||
| HRCF | High-current RC factor | 1.0 | ||
| RBX | Extrinsic base resistance | 0.0 | $\div$ | |
| RBI | Intrinsic base resistance | 0.0 | $\div$ | |
| RE | Emitter resistance | 0.0 | $\div$ | |
| RS | Substrate resistance | 0.0 | $\div$ | |
| RBP | Parasitic base resistance | 0.0 | $\div$ | |
| IS | Transport saturation current | 1.0E-16 | $\times$ | |
| NF | Forward emission coefficient | 1.0 | ||
| NR | Reverse emission coefficient | 1.0 | ||
| FC | Forward bias junction capacitance threshold | 0.9 | ||
| CBEO/CBE0 | Base-emitter small signal capacitance | 0.0 | $\times$ | |
| CJE | Base-emitter zero-bias junction capacitance | 0.0 | $\times$ | |
| PE | Base-emitter grading coefficient | 0.75 | ||
| ME | Base-emitter junction exponent | 0.33 | ||
| AJE | Base-emitter capacitance smoothing factor | -0.5 | ||
| CBCO/CBC0 | Extrinsic base-collector overlap capacitance | 0.0 | $\times$ | |
| CJC | Base-collector zero-bias capacitance | 0.0 | $\times$ | |
| QCO/QC0 | Collector charge at zero bias | 0.0 | $\times$ | |
| CJEP | Base-emitter extrinsic zero-bias capacitance | 0.0 | $\times$ | |
| PC | Base-collector grading coefficient | 0.75 | ||
| MC | Base-collector junction exponent | 0.33 | ||
| AJC | Base-collector capacitance smoothing factor | -0.5 | ||
| CJCP | Base-collector zero-bias extrinsic capacitance | 0.0 | $\times$ | |
| PS | Collector-substrate grading coefficient | 0.75 | ||
| MS | Collector-substrate junction exponent | 0.33 | ||
| AJS | Collector-substrate capacitance smoothing factor | -0.5 | ||
| IBEI | Ideal base-emitter saturation current | 1E-18 | $\times$ | |
| WBE | Portion of IBEI from Vbei, (1-WBE) from Vbex | 1.0 | ||
| NEI | Ideal base-emitter emission coefficient | 1.0 | ||
| IBEN | Non-ideal base-emitter saturation current | 0.0 | $\times$ | |
| NEN | Non-ideal base-emitter emission coefficient | 2.0 | ||
| IBCI | Ideal base-collector saturation current | 1.0E-16 | $\times$ | |
| NCI | Ideal base-collector emission coefficient | 1.0 | ||
| IBCN | Non-ideal base-collector saturation current | 0.0 | $\times$ | |
| NCN | Non-ideal base- collector emission coefficient | 2.0 | ||
| AVC1 | Base-collector weak avalanche parameter 1 | 0.0 | ||
| AVC2 | Base-collector weak avalanche parameter 2 | 0.0 | ||
| ISP | Parasitic transport saturation current | 0.0 | $\times$ | |
| WSP | Portion of Iccp from Vbep, (1-WSP) from Vbci | 1.0 | ||
| NFP | Parasitic forward emission coefficient | 1.0 | ||
| IBEIP | Ideal parasitic base-emitter saturation current | 0.0 | $\times$ | |
| IBENP | Non-ideal parasitic base-emitter saturation current | 0.0 | $\times$ | |
| IBCIP | Ideal parasitic base-collector saturation current | 0.0 | $\times$ | |
| NCIP | Ideal parasitic base-collector emission coefficient | 1.0 | ||
| IBCNP | Non-ideal parasitic base-collector saturation current | 0.0 | $\times$ | |
| NCNP | Non-ideal parasitic base-collector emission coefficient | 2.0 | ||
| VEF | Forward Early voltage (0=infinity) | 0.0 | ||
| VER | Reverse Early voltage (0=infinity) | 0.0 | ||
| IKF | Forward knee current, (0=inifinity) | 0.0 | $\times$ | |
| IKR | Reverse knee current, (0=infinity) | 0.0 | $\times$ | |
| IKP | Parasitic knee current (0=infinity) | 0.0 | $\times$ | |
| TF | Forward transit time | 0.0 | ||
| QTF | Variation of TF with base width modulation | 0.0 | ||
| XTF | Coefficient of TF bias dependence | 0.0 | ||
| VTF | Coefficient of TF dependence on Vbc | 0.0 | ||
| ITF | Coefficient of TF dependence of Icc | 0.0 | ||
| TR | Ideal reverse transit time | 0.0 | ||
| TD | Forward excess phase delay time | 0.0 | ||
| KFN | Flicker noise coefficient | 0.0 | ||
| AFN | Flicker noise exponent | 1.0 | ||
| BFN | Flicker noise frequency exponent | 1.0 | ||
| XRE | Temperature exponent of emitter resistance | 0.0 | ||
| XRB | Temperature exponent of base resistance | 0.0 | ||
| XRC | Temperature exponent of collector resistance | 0.0 | ||
| XRS | Temperature exponent of substrate resistance | 0.0 | ||
| XV0/XV0 | Temperature exponent of Vo | 0.0 | ||
| EA | Activation energy for IS | 1.12 | ||
| EAIE | Activation energy for IBEI | 1.12 | ||
| EAIC | Activation energy for IBCI/IBEIP | 1.12 | ||
| EAIS | Activation energy for IBCIP | 1.12 | ||
| EANE | Activation energy for IBEN | 1.12 | ||
| EANC | Activation energy for IBCN/IBENP | 1.12 | ||
| EANS | Activation energy for IBCNP | 1.12 | ||
| XIS | Temperature exponent of Is | 3.0 | ||
| XII | Temperature exponent of IBEI/IBCI/IBEIP/IBCIP | 3.0 | ||
| XIN | Temperature exponent of IBEN/IBCN/IBENP/IBCNP | 3.0 | ||
| TNF | Temperature coefficient of NF | 0.0 | ||
| TAVC | Temperature coefficient of AVC | 0.0 | ||
The VBIC model is only available with Elite versions.
The Vertical Bipolar Inter-Company (VBIC) model is an advanced bipolar junction transistor model. This is the 4-terminal non-thermal version. There is also a version that supports self-heating effects and has 5 terminals, see Bipolar Junction Transistor (VBIC with self heating).
For more information about VBIC, please refer to this link:
|