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In this Topic Hide
| Dxxxx n+ n- model_name [TEMP=local_temp] |
| n+ | Anode |
| n- | Cathode |
| model_name | Name of model defined in a .MODEL statement. Must begin with a letter but can contain any character except whitespace and '.'. |
| local_temp | Local temperature. Overrides specification in .OPTIONS or .TEMP statements. |
| .model modelname SRDIO ( parameters ) |
| Name | Description | Units | Default |
|---|---|---|---|
| CJO | Zero bias junction capacitance | F | 0.0 |
| EG | Energy gap | ev | 1.11 |
| FC | Forward bias depletion capacitance coefficient | 0.5 | |
| IS | Saturation current | A | 1E-15 |
| MJ | Grading coefficient | 0.5 | |
| N | Forward emission coefficient | 1.0 | |
| RS | Series resistance | $\Omega$ | 0 |
| TNOM | Parameter measurement temperature | 27 | |
| TT | Diffusion transit time | S | 5e-6 |
| TAU | Minority carrier lifetime | 1e-5 | |
| VJ | Built-in potential | V | 1 |
| XTI | Saturation current temperature exponent | 3 | |
The model is based on the paper "A Simple Diode Model with Reverse Recovery" by Peter Lauritzen and Cliff Ma. (See references). The model's governing equations are quite simple and are as follows:
\[ i_d = \frac{q_e - q_m}{TT} \]
\[ \frac{dq_m}{dt} + \frac{q_m}{TAU} - \frac{q_e - q_m}{TT} = 0 \]
\[ q_e = IS \cdot TAU \cdot \left(\exp\left(\frac{v_d}{N\cdot V_t}\right)-1\right) \]
In addition the model uses the standard SPICE equations for junction capacitance and temperature dependence of IS.
Peter O. Lauritzen, Cliff L. Ma, A Simple Diode Model with Reverse Recovery, IEEE Transactions on Power Electronics, Vol. 6, No 2, pp 188-191, April 1991.
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