This section of the tutorial explains how to edit parameter-extracted models. You will start with the schematic that you saved in 2.3 Edit Multi-Level Models and then continue to make changes that more accurately reflect a practical design.
In this topic:
This topic addresses the following key concepts:
In this topic, you will learn the following:
In section 2.1 Add Symbols and Wires, you placed parameter-extracted models for the MOSFET and diode without considering the suitability of the models. The IRF530 MOSFET is a 100V device with a high on-resistance; when what you need is a 30V-rated device with a lower on-resistance. This design will use the Si4410DY MOSFET, which has a drain-source rating of 30V and an on-resistance of approximately 18mΩ.
To change Q1 to use the Si4410DY model, follow these steps:
Next, you need to change the model extraction conditions to the values used in this circuit. The parameter extraction routine requires the following four circuit parameters:
For the optimum model accuracy, all four parameters should accurately reflect the voltage, current, and temperature of the actual circuit.
To change the model extraction conditions, follow these steps:
Parameter label | Value |
Drain to source voltage | 20 |
Gate drive voltage | 5 |
Drain current | 15 |
Model temperature | 55 |
To save your schematic, follow these steps: