Insulated Gate Bipolar Transistor

In this topic:

Netlist Entry

Zxxxx collector gate emitter modelname [AREA=area] [AGD=agd] [KP=kp]
+ [TAU=tau] [WB=wb]
collector Collector node
gate Gate node
emitter Emitter node
area Device area in m2 (overrides model parameter of the same name)
agd Gate-drain overlap area in m2 (overrides model parameter of the same name)
kp Transconductance (overrides model parameter of the same name)
tau Ambipolar recombination lifetime (overrides model parameter of the same name)
wb Base width in metres (overrides model parameter of the same name)

Model syntax

.MODEL model_name NIGBT parameters
Name Description Units Default
AGD Gate-drain overlap area m2 5E-6
AREA Device active area m2 1E-5
BVF Breakdown voltage nonplanar junction factor 1.0
BVN Avalanche multiplication exponent 4.0
CGS Gate-source capacitance per unit area Fcm-2 1.24E-8
COXD Gate-drain overlap oxide capacitance per unit area Fcm-2 3.5E-8
JSNE Emitter electron saturation current density Acm-2 6.5E-13
KF Triode region MOSFET transconductance factor 1.0
KP MOSFET transconductance factor AV-2 0.38
MUN Electron mobility cm-2(Vs)-1 1.5E3
MUP Hole mobility cm-2(Vs)-1 4.5E2
NB Base doping concentration cm-3 2E14
TAU Ambipolar recombination lifetime s 7.1E-6
THETA Transverse field transconductance factor V-1 0.02
VT MOSFET channel threshold voltage V 4.7
VTD Gate-drain overlap depletion threshold V 1E-3
WB Metallurgical base width m 9.0E-5

Notes

The IGBT model is based on the model developed by Allen R. Hefner at the National Institute of Standards and Technology. The parameter names, default values and units have been chosen to be compatible with the PSpice implementation of the same model.

For more information, please refer to:

Modelling Buffer Layer IGBT's for Circuit Simulation, Allen R. Hefner Jr, IEEE Transactions on Power Electronics, Vol. 10, No. 2, March 1995

An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator, Allen R. Hefner, Jr., Daniel M. Diebolt, IEE Transactions on Power Electronics, Vol. 9, No. 5, September 1994