Diode - Soft Recovery

In this topic:

Netlist Entry

Dxxxx n+ n- model_name [TEMP=local_temp]

n+	Anode
n-	Cathode
model_name	Name of model defined in a .MODEL statement. Must begin with a letter but can contain any character except whitespace and '.'.
local_temp	Local temperature. Overrides specification in .OPTIONS or .TEMP statements.

Diode Model Syntax

.model modelname SRDIO ( parameters )

Soft Recovery Diode Model Parameters

Name	Description	Units	Default
CJO	Zero bias junction capacitance	F	0.0
EG	Energy gap	ev	1.11
FC	Forward bias depletion capacitance coefficient		0.5
IS	Saturation current	A	1E-15
MJ	Grading coefficient		0.5
N	Forward emission coefficient		1.0
RS	Series resistance	???MATH???\Omega???MATH???	0
TNOM	Parameter measurement temperature		27
TT	Diffusion transit time	S	5e-6
TAU	Minority carrier lifetime		1e-5
VJ	Built-in potential	V	1
XTI	Saturation current temperature exponent		3

Basic Equations

The model is based on the paper "A Simple Diode Model with Reverse Recovery" by Peter Lauritzen and Cliff Ma. (See references). The model's governing equations are quite simple and are as follows:

\[ i_d = \frac{q_e - q_m}{TT} \]

\[ \frac{dq_m}{dt} + \frac{q_m}{TAU} - \frac{q_e - q_m}{TT} = 0 \]

\[ q_e = IS \cdot TAU \cdot \left(\exp\left(\frac{v_d}{N\cdot V_t}\right)-1\right) \]

In addition the model uses the standard SPICE equations for junction capacitance and temperature dependence of IS.

References

Peter O. Lauritzen, Cliff L. Ma, A Simple Diode Model with Reverse Recovery, IEEE Transactions on Power Electronics, Vol. 6, No 2, pp 188-191, April 1991.

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