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SIMetrix supports a range of device models developed by NXP Semiconductor. These are available with the Elite versions of SIMetrix
The table below shows the models available. Model statements should be in the form:
.model model_name model_type_name LEVEL=level_number parameters
E.g.
.model my_model nmos LEVEL=103 ...
defines a MOS 9 nmos device.
To instantiate the device line must start with the letter as defined in the Device Letter column in the table below. The number of nodes must be within the range specified in the table.
The following table shows all available SIMKIT NXP models
| Device Name | Model Type Name | Device Letter | Max num Terms. | Min num Terms. | Level | Description |
| mos903e_n | nmos | M | 4 | 4 | 103 | MOS 9 Electrical N chan |
| mos903e_p | pmos | M | 4 | 4 | 103 | MOS 9 Electrical P chan |
| mos903_n | nmos | M | 4 | 4 | 203 | MOS 9 Geom. N chan |
| mos903_p | pmos | M | 4 | 4 | 203 | MOS 9 Geom. P chan |
| mos903t_n | nmos | M | 5 | 4 | 223 | MOS 9 Thermal N chan |
| mos903t_p | pmos | M | 5 | 4 | 223 | MOS 9 Thermal P chan |
| bjt504_n | npn | Q | 4 | 3 | 104 | Mextram 4 term NPN |
| bjt504_p | pnp | Q | 4 | 3 | 104 | Mextram 4 term PNP |
| bjt504t_n | npn | Q | 5 | 3 | 124 | Mextram Thermal NPN |
| bjt504t_p | pnp | Q | 5 | 3 | 124 | Mextram Thermal PNP |
| bjt3500_n | npn | Q | 4 | 3 | 304 | BJT 3500 NPN |
| bjt3500_p | pnp | Q | 4 | 3 | 304 | BJT 3500 PNP |
| bjt3500t_n | npn | Q | 5 | 3 | 324 | BJT 3500 Thermal NPN |
| bjt3500t_p | pnp | Q | 5 | 3 | 324 | BJT 3500 Thermal PNP |
| bjt500_p | pnp | Q | 4 | 3 | 200 | BJT Level 500 Lateral PNP |
| bjt500t_p | pnp | Q | 5 | 3 | 220 | BJT Level 500 Lateral PNP, thermal |
| psp1020_n | nmos | M | 4 | 4 | 902 | PSP 1.02 nmos |
| psp1020_p | pmos | M | 4 | 4 | 902 | PSP 1.02 pmos |
| psp1021_n | nmos | M | 4 | 4 | 912 | PSP 1.02 nmos binned version |
| psp1021_p | pmos | M | 4 | 4 | 912 | PSP 1.02 pmos binned version |
| psp102e_n | nmos | M | 4 | 4 | 802 | PSP 1.02 nmos electrical |
| psp102e_p | pmos | M | 4 | 4 | 802 | PSP 1.02 pmos electrical |
| pspnqs1020_n | nmos | M | 4 | 4 | 942 | PSP 1.02 nmos, non-quasi static |
| pspnqs1020_p | pmos | M | 4 | 4 | 942 | PSP 1.02 pmos, non-quasi static |
| pspnqs1021_n | nmos | M | 4 | 4 | 952 | PSP 1.02 nmos, non-quasi static, binned |
| pspnqs1021_p | pmos | M | 4 | 4 | 952 | PSP 1.02 pmos, non-quasi static, binned |
| pspnqs102e_n | nmos | M | 4 | 4 | 842 | PSP 1.02 nmos, non-quasi static, electrical |
| pspnqs102e_p | pmos | M | 4 | 4 | 842 | PSP 1.02 pmos, non-quasi static, electrical |
| psp103_n | nmos | M | 4 | 4 | 903 | PSP 1.03 nmos |
| psp103_p | pmos | M | 4 | 4 | 903 | PSP 1.03 pmos |
| pspnqs103_n | nmos | M | 4 | 4 | 943 | PSP 1.03 nmos, non-quasi-static |
| pspnqs103_p | pmos | M | 4 | 4 | 943 | PSP 1.03 pmos, non-quasi-static |
| mos1102e_n | nmos | M | 4 | 4 | 502 | MOS 11, 1102 nmos, electrical |
| mos1102e_p | pmos | M | 4 | 4 | 502 | MOS 11, 1102 pmos, electrical |
| mos1102et_n | nmos | M | 5 | 4 | 522 | MOS 11, 1102 nmos, electrical, thermal |
| mos1102et_p | pmos | M | 5 | 4 | 522 | MOS 11, 1102 pmos, electrical, thermal |
| mos11020_n | nmos | M | 4 | 4 | 602 | MOS 11, 1102 nmos, geometric |
| mos11020_p | pmos | M | 4 | 4 | 602 | MOS 11, 1102 pmos, geometric |
| mos11020t_n | nmos | M | 5 | 4 | 622 | MOS 11, 1102 nmos, geometric, thermal |
| mos11020t_p | pmos | M | 5 | 4 | 622 | MOS 11, 1102 pmos, geometric, thermal |
| mos11021_n | nmos | M | 4 | 4 | 612 | MOS 11, 1102 nmos, geometric, binned |
| mos11021_p | pmos | M | 4 | 4 | 612 | MOS 11, 1102 pmos, geometric, binned |
| mos11021t_n | nmos | M | 5 | 4 | 632 | MOS 11, 1102 nmos, geometric, binned, thermal |
| mos11021t_p | pmos | M | 5 | 4 | 632 | MOS 11, 1102 pmos, geometric, binned, thermal |
| mos1101e_n | nmos | M | 4 | 4 | 501 | MOS 11, 1101 nmos, electrical |
| mos1101e_p | pmos | M | 4 | 4 | 501 | MOS 11, 1101 pmos, electrical |
| mos1101et_n | nmos | M | 5 | 4 | 521 | MOS 11, 1101 nmos, electrical, thermal |
| mos1101et_p | pmos | M | 5 | 4 | 521 | MOS 11, 1101 pmos, electrical, thermal |
| mos11010_n | nmos | M | 4 | 4 | 601 | MOS 11, 1101 nmos, geometric |
| mos11010_p | pmos | M | 4 | 4 | 601 | MOS 11, 1101 pmos, geometric |
| mos11010t_n | nmos | M | 5 | 4 | 621 | MOS 11, 1101 nmos, geometric, thermal |
| mos11010t_p | pmos | M | 5 | 4 | 621 | MOS 11, 1101 pmos, geometric, thermal |
| mos11011_n | nmos | M | 4 | 4 | 611 | MOS 11, 1101 nmos, geometric, binned |
| mos11011_p | pmos | M | 4 | 4 | 611 | MOS 11, 1101 pmos, geometric, binned |
| mos11011t_n | nmos | M | 5 | 4 | 631 | MOS 11, 1101 nmos, geometric, binned, thermal |
| mos11011t_p | pmos | M | 5 | 4 | 631 | MOS 11, 1101 pmos, geometric, binned, thermal |
| juncap | d | D | 2 | 2 | 101 | JUNCAP |
| juncap200 | d | D | 2 | 2 | 102 | JUNCAP 200 |
| mos2002_n | nmos | M | 4 | 4 | 1302 | MOS Model 20 level 2002, nmos |
| mos2002_p | pmos | M | 4 | 4 | 1302 | MOS model 20 level 2002, pmos |
| mos2002e_n | nmos | M | 4 | 4 | 1202 | MOS Model 20 level 2002, nmos, electrical |
| mos2002e_p | pmos | M | 4 | 4 | 1202 | MOS Model 20 level 2002, pmos, electrical |
| mos2002t_n | nmos | M | 5 | 4 | 1322 | MOS Model 20 level 2002, nmos, thermal |
| mos2002t_p | pmos | M | 5 | 4 | 1322 | MOS Model 20 level 2002, pmos, thermal |
| mos2002et_n | nmos | M | 5 | 4 | 1222 | MOS Model 20 level 2002, nmos, electrical, thermal |
| mos2002et_p | pmos | M | 5 | 4 | 1222 | MOS Model 20 level 2002, pmos, electrical, thermal |
| mos3100_n | nmos | M | 4 | 4 | 700 | MOS Model Level 3100, nmos |
| mos3100_p | pmos | M | 4 | 4 | 700 | MOS Model Level 3100, pmos |
| mos3100t_n | nmos | M | 5 | 4 | 720 | MOS Model Level 3100, nmos, thermal |
| mos3100t_p | pmos | M | 5 | 4 | 720 | MOS Model Level 3100, pmos, thermal |
| mos40_n | nmos | M | 4 | 4 | 400 | MOS model Level 40, nmos |
| mos40_p | pmos | M | 4 | 4 | 400 | MOS model Level 40, pmos |
| mos40t_n | nmos | M | 5 | 4 | 420 | MOS model Level 40, nmos, thermal |
| mos40t_p | pmos | M | 5 | 4 | 420 | MOS model Level 40, pmos, thermal |
Binned models are not yet integrated with the library binning system. So, to use the binning features of binned models, you will need to manually generate separate model names for each bin.
Some models do not fully implement real-time noise. Many MOS models include frequency dependent gate noise and this is not included in real-time noise analyses. Also some models include correlated noise which is also not included. In most cases these effects are small anyway and have little effect.
.options noMos9GateNoise
to disable the same effects in AC small signal noise. A comparison can then be made to estimate the effect these noise sources may have in real-time noise. Although the option name suggests that it only applies to MOS9, this does in fact work with all applicable models.
In the case of PSP 102 models, you can instead invoke the Verilog-A based model which fully supports all noise effects in real-time noise analysis. See next section for details.
The PSP 102 nmos and pmos geometric models (level 902) are also available as level 1023. However the two models are implemented differently. Level 902 is implemented through the SIMKIT interface. The model code itself in this case is created using ADMS from the Verilog-A description. However, it seems that the noise model for this is not created from the Verilog-A code and appears to have been hand coded.
The Level 1023 version is built entirely from the Verilog-A code using the SIMetrix Verilog-A compiler but using a more advanced commercial C-compiler than the open source version supplied with SIMetrix. This version has the benefit over the Simkit version that it fully supports real-time noise including correlated effects and gate noise. It is however a little slower - typically about 5-10% compared to the SIMKIT version.
We have done extensive side by side tests of both models and both give identical results to a high degree of accuracy.
Older "Philips Compact Models" (PCM) devices are no longer supported. Nearly all of the original PCM devices have been replaced by Simkit devices that are functionally identical. The following devices are not available in the Simkit library:
MOS 9 version 9.02 devices are no longer available, however, version 9.03 is fully backward compatible. Version 9.03 is available in the Simkit library. Version 9.02 was previously accessed using levels 102 and 202. These level numbers now map to version 9.03. The only change in behaviour is that some new version 9.03 parameters will be accepted correctly without error.
Mextram 5.03 is no longer available. Superseded by 5.04 but this is not directly compatible.
Diode level 200 is no longer available.
MOS 11 SIMetrix level 500/600 is no longer available. Superseded by 501/601. Currently no information is available as to whether or not the new version is backward compatible.
MOS level 302 is no longer available.
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