In this topic:
Zxxxx collector gate emitter modelname [AREA=area] [AGD=agd] [KP=kp] + [TAU=tau] [WB=wb]
| collector | Collector node |
| gate | Gate node |
| emitter | Emitter node |
| area | Device area in m2 (overrides model parameter of the same name) |
| agd | Gate-drain overlap area in m2 (overrides model parameter of the same name) |
| kp | Transconductance (overrides model parameter of the same name) |
| tau | Ambipolar recombination lifetime (overrides model parameter of the same name) |
| wb | Base width in metres (overrides model parameter of the same name) |
.MODEL model_name NIGBT parameters
| Name | Description | Units | Default |
| AGD | Gate-drain overlap area | m2 | 5E-6 |
| AREA | Device active area | m2 | 1E-5 |
| BVF | Breakdown voltage nonplanar junction factor | 1.0 | |
| BVN | Avalanche multiplication exponent | 4.0 | |
| CGS | Gate-source capacitance per unit area | Fcm-2 | 1.24E-8 |
| COXD | Gate-drain overlap oxide capacitance per unit area | Fcm-2 | 3.5E-8 |
| JSNE | Emitter electron saturation current density | Acm-2 | 6.5E-13 |
| KF | Triode region MOSFET transconductance factor | 1.0 | |
| KP | MOSFET transconductance factor | AV-2 | 0.38 |
| MUN | Electron mobility | cm-2(Vs)-1 | 1.5E3 |
| MUP | Hole mobility | cm-2(Vs)-1 | 4.5E2 |
| NB | Base doping concentration | cm-3 | 2E14 |
| TAU | Ambipolar recombination lifetime | s | 7.1E-6 |
| THETA | Transverse field transconductance factor | V-1 | 0.02 |
| VT | MOSFET channel threshold voltage | V | 4.7 |
| VTD | Gate-drain overlap depletion threshold | V | 1E-3 |
| WB | Metallurgical base width | m | 9.0E-5 |
The IGBT model is based on the model developed by Allen R. Hefner at the National Institute of Standards and Technology. The parameter names, default values and units have been chosen to be compatible with the PSpice implementation of the same model.
For more information, please refer to:
Modelling Buffer Layer IGBT's for Circuit Simulation, Allen R. Hefner Jr, IEEE Transactions on Power Electronics, Vol. 10, No. 2, March 1995
An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator, Allen R. Hefner, Jr., Daniel M. Diebolt, IEE Transactions on Power Electronics, Vol. 9, No. 5, September 1994
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